DKM400SA01B is a high-performance N-channel power MOSFET module designed for high-efficiency power conversion systems. It features a 100V drain-source voltage rating, 400A continuous drain current at Tc=100°C, and low RDS(ON) of 1.1mΩ typ. at VGS=10V. With low gate charge, fast recovery body diode, and 175°C operating temperature capability, this module is ideal for demanding applications such as DC/DC converters, ISG EV products, and UPS inverters.
Product Description
DKM400SA01B is a high-performance N-channel power MOSFET module designed for high-efficiency power conversion systems. It features a 100V drain-source voltage rating, 400A continuous drain current at Tc=100°C, and low RDS(ON) of 1.1mΩ typ. at VGS=10V. With low gate charge, fast recovery body diode, and 175°C operating temperature capability, this module is ideal for demanding applications such as DC/DC converters, ISG EV products, and UPS inverters.
Key Features
N-channel power MOSFET module
100V drain-source voltage
400A continuous drain current at Tc=100°C
550A continuous drain current at Tc=25°C
800A pulsed drain current
Low RDS(ON): 1.1mΩ typ., 1.4mΩ max.
175°C operating temperature
Low gate charge for reduced switching loss
Fast recovery body diode
Built-in gate protected resistance
Internal MOSFET chip gate resistance design
High power dissipation capability
Compact module structure
Suitable for high-current switching systems
Applications
High efficiency DC/DC converters
ISG EV products
UPS inverter systems
Industrial power conversion equipment
High-current switching circuits
Electric vehicle auxiliary power systems
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